发明名称 Method and structure for SRAM cell trip voltage measurement
摘要 A parametric test circuit is disclosed (FIG. 6). The test circuit includes a latch circuit having true and complementary terminals. A first access transistor (206) has a current path connected between the true terminal and a first access terminal (214) and has a first control terminal. A second access transistor (208) has a current path connected between the complementary terminal and a second access terminal (216) and has a second control terminal connected to the first control terminal. A first pass gate (604) has a current path connected between the first access terminal (214) and a third access terminal (XBLT) and has a third control terminal. A second pass gate (606) has a current path connected between the second access terminal (216) and a fourth access terminal (XBLB) and has a fourth control terminal connected to the third control terminal.
申请公布号 US8233341(B2) 申请公布日期 2012.07.31
申请号 US20090584220 申请日期 2009.09.01
申请人 DENG XIAOWEI;LOH WAH KIT;TEXAS INSTRUMENTS INCORPORATED 发明人 DENG XIAOWEI;LOH WAH KIT
分类号 G11C29/50 主分类号 G11C29/50
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