Semiconductor structure having varactor with parallel DC path adjacent thereto

摘要

A semiconductor structure includes a semiconductor substrate having a first region of a first polarity and a second region of a second polarity adjacent to the first region; and a first terminal including: a first deep trench located in the first region, a first node dielectric abutting all but an upper portion of sidewalls and a bottom of the first deep trench; a first conductive inner electrode inside the first node dielectric and electrically insulated from the first region by the first node dielectric; and a first electrical contact electrically coupling the first conductive inner electrode to the first region.