发明名称 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
摘要 Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.
申请公布号 US8233314(B2) 申请公布日期 2012.07.31
申请号 US20100773831 申请日期 2010.05.04
申请人 MULLNER PETER;KNOWLTON WILLIAM B;BOISE STATE UNIVERSITY 发明人 MULLNER PETER;KNOWLTON WILLIAM B
分类号 G11C11/00 主分类号 G11C11/00
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