| 摘要 |
A spin injection device and spin transistor including a spin injection device. A spin injection device includes different semiconductor materials and a spin-polarizing ferromagnetic material there between. The semiconductor materials may have different crystalline structures, e.g., a first material can be polycrystalline or amorphous silicon, and a second material can be single crystalline silicon. Charge carriers are spin-polarized when the traverse the spin-polarizing ferromagnetic material and injected into the second semiconductor material. A Schottky barrier height between the first semiconductor and ferromagnetic materials is larger than a second Schottky barrier height between the ferromagnetic and second semiconductor materials. A spin injection device may be a source of a spin field effect transistor.
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