发明名称 |
Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device |
摘要 |
A charge detection device includes: a substrate having a first conductive type of predetermined region; a second conductive type of drain region disposed in the predetermined region of the substrate; a second conductive type of source region disposed in the predetermined region of the substrate; a second conductive type of channel region disposed between the drain region and the source region; a gate formed via an insulating film on the channel region; a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating signal charges as a target to be measured; a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region; and a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.
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申请公布号 |
US8233065(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20100656001 |
申请日期 |
2010.01.13 |
申请人 |
KAMEDA SHUNSUKE;KARASAWA NOBUHIRO;SONY CORPORATION |
发明人 |
KAMEDA SHUNSUKE;KARASAWA NOBUHIRO |
分类号 |
H04N3/14;H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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