发明名称 |
Lateral epitaxial grown SOI in deep trench structures and methods of manufacture |
摘要 |
Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer comprising a substrate, buried oxide layer (BOX) and silicon (SOI) film. The method further includes forming a plate on a sidewall of the deep trench structure in the substrate by an implant process. The implant processes contaminate exposed edges of the SOI film in the deep trench structure. The method further includes removing the contaminated exposed edges of the SOI film by an etching process to form a void in the SOI film. The method further includes growing epitaxial Si in the void, prior to completing a capacitor structure. |
申请公布号 |
US8232163(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20100916864 |
申请日期 |
2010.11.01 |
申请人 |
ERVIN JOSEPH;MESSENGER BRIAN;NUMMY KAREN A.;TODI RAVI M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ERVIN JOSEPH;MESSENGER BRIAN;NUMMY KAREN A.;TODI RAVI M. |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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