发明名称 Structure and design structure for high-Q value inductor and method of manufacturing the same
摘要 Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.
申请公布号 US8232173(B2) 申请公布日期 2012.07.31
申请号 US20100917029 申请日期 2010.11.01
申请人 DING HANYI;ERTURK METE;GROVES ROBERT A.;HE ZHONG-XIANG;LINDGREN PETER J.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DING HANYI;ERTURK METE;GROVES ROBERT A.;HE ZHONG-XIANG;LINDGREN PETER J.;STAMPER ANTHONY K.
分类号 H01L21/20 主分类号 H01L21/20
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