发明名称 |
Structure and design structure for high-Q value inductor and method of manufacturing the same |
摘要 |
Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical. |
申请公布号 |
US8232173(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20100917029 |
申请日期 |
2010.11.01 |
申请人 |
DING HANYI;ERTURK METE;GROVES ROBERT A.;HE ZHONG-XIANG;LINDGREN PETER J.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DING HANYI;ERTURK METE;GROVES ROBERT A.;HE ZHONG-XIANG;LINDGREN PETER J.;STAMPER ANTHONY K. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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