Multiferroic layer, structure including the layer, and methods of forming the layer and the structure

摘要

The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO3, (R=Lanthanide) . . . (1)