| 摘要 |
An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm−1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm−1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm−1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved. |
