OXIDE SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: An oxide semiconductor device and a semiconductor apparatus are provided to improve mobility even if light is irradiated by using an oxide semiconductor having crystallizability on a semiconductor layer. CONSTITUTION: An oxide semiconductor layer(708) is formed on an insulating surface. A gate insulating layer(112) is formed on the oxide semiconductor layer. A gate electrode(114) is overlapped with the oxide semiconductor layer by interposing the gate insulating layer. The oxide semiconductor layer has a laminating structure of including a first oxide semiconductor film and a second oxide semiconductor film. The second oxide semiconductor film is inserted between the gate insulating layer and the first oxide semiconductor film. A band gap value of the first oxide semiconductor film is smaller than the band gap value of the second oxide semiconductor film.