发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A substrate processing method and an apparatus thereof are provided to remove foreign materials from a surface of a semiconductor mold with a brush revolving and vibrating. CONSTITUTION: A cooling gas discharge nozzle(7) is arranged on an upper portion of an initial position(P(Rin)) on a substrate(W). Cooling gas is supplied to the initial position of a rotating substrate and DIW(Deionized Water: coagulation object liquid) attached to an initial area including the initial position and a rotation center area coagulates. All DIW attached to the substrate surface is coagulated by broadening a coagulation area in the outside of the substrate and the entire of a liquid film(LF) is frozen along with initial coagulation area formation.
申请公布号 KR20120084649(A) 申请公布日期 2012.07.30
申请号 KR20110093878 申请日期 2011.09.19
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 KATO MASAHIKO;FUJIWARA NAOZUMI;MIYA KATSUHIKO
分类号 H01L21/302 主分类号 H01L21/302
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