发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PURPOSE: A substrate processing method and an apparatus thereof are provided to remove foreign materials from a surface of a semiconductor mold with a brush revolving and vibrating. CONSTITUTION: A cooling gas discharge nozzle(7) is arranged on an upper portion of an initial position(P(Rin)) on a substrate(W). Cooling gas is supplied to the initial position of a rotating substrate and DIW(Deionized Water: coagulation object liquid) attached to an initial area including the initial position and a rotation center area coagulates. All DIW attached to the substrate surface is coagulated by broadening a coagulation area in the outside of the substrate and the entire of a liquid film(LF) is frozen along with initial coagulation area formation.
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申请公布号 |
KR20120084649(A) |
申请公布日期 |
2012.07.30 |
申请号 |
KR20110093878 |
申请日期 |
2011.09.19 |
申请人 |
DAINIPPON SCREEN MFG. CO., LTD. |
发明人 |
KATO MASAHIKO;FUJIWARA NAOZUMI;MIYA KATSUHIKO |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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