发明名称 SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHOD OF PRODUCING SAID TARGET
摘要 <p>SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHODOF PRODUCING SAID TARGETProvided is a sputtering target with reduced particle generation having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, and in which the area ratio of defects on the target surface is 0,5% or less, as well as a method of producing such a sputtering target. Additionally provided are a sputtering target wherein the target surface, which contains large amounts of substances without ductility, is improved, and whereby the generation of nodules and particles during sputtering can be prevented or inhibited, and a surfacefinishing method thereof.Fig, 5</p>
申请公布号 SG181632(A1) 申请公布日期 2012.07.30
申请号 SG20120042826 申请日期 2010.12.06
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 KOIDE KEI
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