| 摘要 |
FIELD: process engineering. ^ SUBSTANCE: first- and second-kind particles 22, 23 are fed jointly with carrier gas into stagnation chamber 15 and accelerated via nozzle 14 arranged thereon on substrate 25 to be coated. Note here that first-kind particles 22 are fed in first zone 20 of said stagnation chamber located closer to nozzle 14 than second zone 21 wherein second-kind particles 23 are fed that feature higher hardness and/or lower ductility than first-kind particles 22. Proposed device comprises stagnation chamber 15 with gas carrier entry opening 17, first line 19 to feed first-kind particles, second line 18a, 18b to feed second-kind particles, and nozzle 14 arranged downstream of stagnation chamber 15. Note also that first line 19 extends into stagnation chamber first zone 20 located closer to nozzle than second zone 21 wherein second line extends. ^ EFFECT: higher degree of second-kind fragile particle implantation into ductile matrix of first-kind particles. ^ 9 cl, 2 dwg |
