| 摘要 |
PURPOSE: A low power magnetic random access memory cell is provided to reduce power consumption by decreasing a spin polarization write current for switching a magnetization direction of a storage layer. CONSTITUTION: A magnetic random access memory(MRAM) cell includes a top electrode, a first ferromagnetic layer(21), a second ferromagnetic layer(23), a tunnel barrier layer(22), and a magnetic tunnel junction with a front-end layer. The first ferromagnetic layer includes a first magnetization direction. The second ferromagnetic layer has a second magnetization direction which is controlled based on the first magnetization direction. The tunnel barrier layer is located between the first ferroelectric layer and the second ferroelectric layer. The second ferroelectric layer is located between the front-end layer and the tunnel barrier layer and has a thickness of 0.5 to 2 nm.
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