| 摘要 |
The semiconductor device comprises a metal line configured to be buried in an interlayer insulation layer formed over a semiconductor substrate, a first insulating pattern configured to be formed over the interlayer insulating layer and the first metal line so that the first metal line is exposed, a second insulating pattern configured to be buried between the first insulating patterns so that the first metal line is exposed, and a third insulating pattern configured to be formed over the first insulating pattern and the second insulating pattern so that the first metal line is exposed, thereby reducing the resistance of a contact plug, such that it operates at high speed and requires low power consumption. |
