| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a solid state imaging element capable of realizing a configuration suppressing smears, and of preventing both reflection and film thinning of an insulating film. <P>SOLUTION: A gate insulating film 120 is formed on a semiconductor substrate 110 having a first refraction index, and then a plurality of transfer electrodes 130 are formed in a part over each electric charge transfer region 110b. A second refraction index film 150a having a second refraction index lower than the first refraction index is formed along an upper face and a lateral face of each of the transfer electrodes and an upper face of a part between the adjacent transfer electrodes in the gate insulating film, and a third refraction index film 160a having a third refraction index lower than the second refraction index is formed at least in a part between the adjacent transfer electrodes. In the third refraction index film, a part adjacent to a part along the lateral face of each of the transfer electrodes in the second refraction index film is removed, and then, a light-shielding material film is formed all over the semiconductor substrate. A part over a remaining part of the third refraction index film remained between the adjacent transfer electrodes in the light-shielding material film is etched to expose a part of the remaining part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
