发明名称 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS
摘要 A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
申请公布号 US2012190182(A1) 申请公布日期 2012.07.26
申请号 US201213440495 申请日期 2012.04.05
申请人 LI JIPING;HUNTER AARON MUIR;ADAMS BRUCE E.;MOFFITT THEODORE P.;MOFFATT STEPHEN;APPLIED MATERIALS, INC. 发明人 LI JIPING;HUNTER AARON MUIR;ADAMS BRUCE E.;MOFFITT THEODORE P.;MOFFATT STEPHEN
分类号 H01L21/265 主分类号 H01L21/265
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