| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a method for manufacturing the same capable of increasing a saturation electric charge amount, alleviating electric field concentration in the vicinity of an element isolation part, reducing etching damage to a substrate, and reducing a dark current. <P>SOLUTION: A solid-state imaging device has: a first conductivity type electric charge storage region 2; an element isolation semiconductor region 7 consisting of a second conductivity type impurity semiconductor region; a channel stop region 5 consisting of the second conductivity type impurity semiconductor region; and an insulator 20 arranged on the channel stop region 5. The insulator 20 has a first insulation part 4 arranged on the element isolation semiconductor region 7 via the channel stop region 5, and a second insulation part 8 arranged so as to be adjacent to outside the first insulation part 4 and having a structure in which the thickness becomes thinner with distance from the first insulation part 4. The electric charge storage region 2 has a periphery part 21 formed by ion implantation to the semiconductor via the second insulation part 8, and contacting with the channel stop region 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
