| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a light-emitting device which can improve adhesiveness between a semiconductor laminate structure constituting a light-emitting region and a transparent conductive film formed thereon thereby reducing contact resistance between the both. <P>SOLUTION: In a light-emitting device, a p-type GaN layer 16 formed on a sapphire substrate 11 for forming a semiconductor laminate structure of the light-emitting device is formed such that a carbon content ratio becomes 10-30% with respect to a content ratio of the whole chemical elements contained in a surface of the p-type GaN layer, and an oxygen content ratio becomes 10-25% with respect to the content ratio of the whole chemical elements contained in the surface of the p-type GaN layer. An ITO film 17 is formed on the p-type GaN layer 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
