| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist underlay film material from which an underlay film can be formed, the film being capable of reducing reflectance as an underlay film for a three-layer resist process, having excellent embedding characteristics, high bending durability of a pattern, and in particular, preventing collapse or distortion in lines after etching lines having a width of less than 60 nm and a high aspect ratio, and to provide a method for forming a pattern using the material. <P>SOLUTION: The resist underlay film material contains a polymer obtained by condensing at least one or more kinds of compounds expressed by general formula (1-1) and/or (1-2), one or more kinds of compounds expressed by general formula (2), and one or more kinds of compounds expressed by Y-CHO and/or its equivalent. <P>COPYRIGHT: (C)2012,JPO&INPIT |
