| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a methods for depositing silicon dioxide by atomic layer deposition in general, where pyridine is provided as a catalyst so that water can be utilized as an oxidization source while depositing at a low temperature. <P>SOLUTION: Prior to exposing a substrate to water, the substrate may be exposed to a pyridine soak process 320. Additionally, the water may be co-flowed to a chamber with pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine. <P>COPYRIGHT: (C)2012,JPO&INPIT |
