| 发明名称 |
ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION |
| 摘要 |
A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process.
|
| 申请公布号 |
US2012190216(A1) |
申请公布日期 |
2012.07.26 |
| 申请号 |
US201113097931 |
申请日期 |
2011.04.29 |
| 申请人 |
CHAN KEVIN K.;HARLEY ERIC C.;LAUER ISAAC;LEE KAM-LEUNG;RONSHEIM PAUL A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;HARLEY ERIC C.;LAUER ISAAC;LEE KAM-LEUNG;RONSHEIM PAUL A. |
| 分类号 |
H01L21/268;B82Y40/00 |
主分类号 |
H01L21/268 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
