| 发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DEVICE TERMINATION AND STRUCTURE THEREFOR |
| 摘要 |
At least one exemplary embodiment is directed to a semiconductor edge termination structure, where the edge termination structure comprises several conductivity layers and a buffer layer.
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| 申请公布号 |
US2012187526(A1) |
申请公布日期 |
2012.07.26 |
| 申请号 |
US201113011590 |
申请日期 |
2011.01.21 |
| 申请人 |
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发明人 |
ROIG-GUITART JAUME;HOSSAIN ZIA;MOENS PETER |
| 分类号 |
H01L23/58;H01L21/761 |
主分类号 |
H01L23/58 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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