发明名称 |
Double diffused metal oxide semiconductor device and manufacturing method thereof |
摘要 |
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance. |
申请公布号 |
US2012187483(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113066622 |
申请日期 |
2011.04.20 |
申请人 |
YANG CHING-YAO;HUANG TSUNG-YI;CHU HUAN-PING;SU HUNG-DER;RICHTEK TECHNOLOGY CORPORATION, R.O.C. |
发明人 |
YANG CHING-YAO;HUANG TSUNG-YI;CHU HUAN-PING;SU HUNG-DER |
分类号 |
H01L29/78;H01L21/336;H01L21/8232 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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