| 摘要 |
<p>Provided are a polishing agent and a polishing method which are advantageous for chemically and mechanically polishing a surface to be polished that includes a silicon nitride film, and with which a surface having high flatness can be polished with greater speed in the manufacture of a semiconductor integrated circuit device. The polishing agent for chemically and mechanically polishing a surface to be polished in the manufacture of a semiconductor integrated circuit device is characterized in containing cerium oxide particles, a water-soluble polymer, a basic compound, and water, the ratio of the water-soluble polymer relative to 100 parts by mass of the cerium oxide particles being 5 to 30 parts by mass, and the pH ranging from 9.7 to less than 12. The polishing method comprises supplying a polishing agent to a polishing pad, bringing the polishing pad and the surface to be polished of the semiconductor integrated circuit device into contact with each other, and polishing the surface to be polished by the relative motion between the two, wherein the surface to be polished includes a silicon nitride film surface, and the above-described polishing agent is used.</p> |
