| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device manufacturing method which can approximate a total value of electrostatic capacitance of a laminated MIM capacitor to intended electrostatic capacitance. <P>SOLUTION: An underlaying metal film 2, a lower layer insulation film 4 and an intermediate metal film 5 are sequentially laminated on a semiconductor substrate 1. A thickness of the lower layer insulation film 4 is measured. After measuring the thickness of the lower layer insulation film 4, an upper layer insulation film 7 and an overlaying metal film 8 are sequentially laminated on the intermediate metal film 5. A first MIM capacitor includes the underlaying metal film 2, the lower layer insulation film 4 and the intermediate metal film 5. A second MIM capacitor includes the intermediate metal film 5, the upper layer insulation film 7 and the overlaying metal film 8. A design condition of at least one of the upper layer insulation film 7 and the overlaying metal film 8 is adjusted based on the measured thickness of the lower layer insulation film 4 such that a total value of electrostatic capacitance of the first MIM capacitor and electrostatic capacitance of the second MIM capacitor approximates intended electrostatic capacitance. <P>COPYRIGHT: (C)2012,JPO&INPIT |
