发明名称 |
LAMINATE STRUCTURED SEMICONDUCTOR DEVICE HAVING THROUGH ELECTRODE, SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR MEMORY/SYSTEM, AND OPERATION METHOD OF THE SEMICONDUCTOR MEMORY/SYSTEM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated structured semiconductor device having a through electrode, a semiconductor memory device, a semiconductor memory/system, and an operation method of the semiconductor memory/system. <P>SOLUTION: A semiconductor device has a structure which prevents collisions of information transmitted between multiple semiconductor layers. The semiconductor device comprises: at least one first semiconductor chip including a first temperature sensor circuit outputting first temperature information; a first bump which is not electrically connected with the through electrode and is electrically connected with the first temperature sensor circuit; and a second bump which is electrically connected with the through electrode of the first semiconductor chip. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012142576(A) |
申请公布日期 |
2012.07.26 |
申请号 |
JP20110285396 |
申请日期 |
2011.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM JUNG-SIK;LEE DONG-HYUK;RI KOTETSU;RYU JANG-WOO |
分类号 |
H01L27/04;H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L21/8242;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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