| 发明名称 |
GROWTH METHOD OF NITRIDE SEMICONDUCTOR LAYER AND LIGHT EMITTING DEVICE USING THE GROWTH METHOD |
| 摘要 |
Growing a first nitride semiconductor layer on an AlxGayInI-x-yN (0<x<1, 0<y<1, 0<x+y<1) layer, a second step for reducing the thickness of the first nitride semiconductor layer by growth interruption and, growing a second nitride semiconductor layer having a band gap energy higher than that of the first nitride semiconductor layer on the first nitride semiconductor layer with the reduced thickness and a light emitting device using the growth method. |
| 申请公布号 |
US2012187366(A1) |
申请公布日期 |
2012.07.26 |
| 申请号 |
US201113151162 |
申请日期 |
2011.06.01 |
| 申请人 |
YOON EUIJOON;KWON SOON-YONG;MOON PIKYUNG;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
YOON EUIJOON;KWON SOON-YONG;MOON PIKYUNG |
| 分类号 |
H01L33/06;H01L21/20;H01L21/205;H01L33/32;H01L33/42 |
主分类号 |
H01L33/06 |
| 代理机构 |
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| 主权项 |
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