RESISTANCE-VARYING FIELD EFFECT TRANSISTOR WITH SUPER-STEEP SUB-THRESHOLD SLOPE AND MANUFACTURING METHOD THEREOF

摘要

A resistance-varying field effect transistor with a super-steep sub-threshold slope and a manufacturing method thereof are provided. The resistance-varying field effect transistor comprises a gate control electrode layer, a gate dielectric layer (2), a semiconductor substrate (1), a source doped region and a drain doped region (7). The control gate adopts the gate overlapped structure which is comprised of a bottom layer - a bottom electrode layer (3), an intermediate layer - a resistance-varying material layer (4), a top layer - a top electrode layer (5) in turn. The resistance-varying field effect transistor has larger conduction current, lower operation voltage and better sub-threshold character.