发明名称 POLYCRYSTALLINE SILICON AND METHOD FOR THE PRODUCTION THEREOF
摘要 <p>Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.</p>
申请公布号 KR101168954(B1) 申请公布日期 2012.07.26
申请号 KR20107007201 申请日期 2008.09.22
申请人 发明人
分类号 C01B33/035;C30B25/00;C30B29/06 主分类号 C01B33/035
代理机构 代理人
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