| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for achieving miniaturization and uniformity of a polycrystal silicon particle diameter without increasing manufacturing time and manufacturing cost. <P>SOLUTION: A buffered substrate for a semiconductor is used for a substrate and the like in which a polycrystal silicon layer 108 is obtained by crystallization of a silicon layer 108 formed on a substrate 100 by irradiation of laser beams 106, and a buffer layer 102 is formed between the substrate 100 and the silicon layer 104. In such a buffered substrate having the buffer layer 102, the buffer layer 102 has a melting point higher than a limit temperature of the substrate 100, and further, in crystallization of the silicon layer 104, defines nuclear density of the silicon layer for forming uniform silicon crystal particles on the buffer layer 102, and still further, functions as a basis for isotropic grain growth. <P>COPYRIGHT: (C)2012,JPO&INPIT |
