| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce ununiformity of a potential difference among a plurality of floating regions. <P>SOLUTION: A semiconductor device comprises an external capacity 6(k) between a region 3(k) and a region 3(k+1). Respective capacities of a plurality of external capacities 6(k) are selected to be greater as k increase (i.e., increases from right towards left on the sheet of FIG. 1). By this structure, ununiformity of potential differences between the region 3(k) and the region 3(k+1) can be reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
