发明名称 |
FIELD EFFECT DEVICE PROVIDED WITH A THINNED COUNTER-ELECTRODE AND METHOD FOR FABRICATING |
摘要 |
A field effect device comprises a substrate of semiconductor on insulator type successively provided with a support substrate, an electrically insulating layer and a semiconductor material film. First and second source/drain electrodes are formed in the semiconductor material layer. A conduction channel is formed in the semiconductor material layer and separates the first and second source/drain electrodes. A counter-electrode is formed in the support substrate and faces the first and second source/drain electrodes and the conduction channel. The counter-electrode is formed by a doped area of the support substrate having a first doping impurity concentration which decreases from an interface between the electrically insulating layer and the support substrate.
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申请公布号 |
US2012187488(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213352784 |
申请日期 |
2012.01.18 |
申请人 |
GRENOUILLET LAURENT;VINET MAUD;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
GRENOUILLET LAURENT;VINET MAUD |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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