| 摘要 |
A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including III-V semiconductor material, and growing metal contacts on the grown raised source/drain regions. Another method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing metal contacts on the source/drain regions. Transistors and computer program products are also disclosed.
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