| 摘要 |
A semiconductor memory apparatus includes a bit line sense amplifier unit and a driving voltage supply unit. The bit line sense amplifier unit senses and amplifies a signal provided from a memory cell using a pull-up driving voltage provided through a pull-up power line and a pull-down driving voltage provided through a pull-down power line. The driving voltage supply unit supplies the pull-down driving voltage having a first pull-down driving force during a first amplification period, and supplies the pull-down driving voltage having a second pull-down driving force greater than the first pull-down driving force during a second amplification period after the first amplification period. |
