| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a retention property of an electric fuse or an anti-fuse. <P>SOLUTION: A semiconductor device 100 comprises: a semiconductor substrate; and an electric fuse 200 provided on the semiconductor substrate. The electric fuse 200 comprises: a first fuse link 202 and a second fuse link 204 connected in series; a first current inflow/outflow terminal (first terminal 206) and a second current inflow/outflow terminal (second terminal 208) respectively provided on one end and another end of the first fuse link 202; and a third current inflow/outflow terminal (second terminal 208) and a fourth current inflow/outflow terminal (third terminal 210) respectively provided on one end and another end of the second fuse link 204. <P>COPYRIGHT: (C)2012,JPO&INPIT |
