| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a veer plug is formed by a carbon nanotube, which improves manufacturing efficiency. <P>SOLUTION: A veer hole is formed in an insulation film and catalyst particles 3c are adhered to the bottom of the veer hole. In the veer hole, carbon nanotubes are grown beyond a surface of the insulation film beginning at the catalyst particles to form a bundle of carbon nanotubes of a plurality of carbon nanotubes. A coating liquid of a dielectric film is coated on the insulation film to cover the bundle of the carbon nanotubes and a thickness of the coating liquid is reduced until a height of a coating film on the insulation film becomes less than a height of the carbon nanotubes on the surface of the insulation film. The coating film with the reduced thickness is cured to form a dielectric film 4D. The dielectric film is removed to expose the surface of the insulation film and veer plugs 4VA and 4VB are formed on the surface of the insulation film by the carbon nanotubes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
