METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SiC semiconductor device having a gate insulating film with high reliability.

SOLUTION: A semiconductor device comprises: a silicon carbide substrate (1) having an off-angle of 8 degrees or less; a first silicon carbide region (2) of a first conductivity type formed on the substrate; a second silicon carbide region (3) of a second conductivity type formed on a surface of the first silicon carbide region; a third silicon carbide region (4) of the first conductivity type that is formed on a surface of the second silicon carbide region and in which the impurity concentration is adjusted to be substantially the same as the impurity concentration of the second silicon carbide region; a fourth silicon carbide region (5) of the first conductivity type selectively formed on a surface of the third silicon carbide region; a fifth silicon carbide region (6) of the second conductivity type formed on the surface of the second silicon carbide region; a gate insulating film (7) formed so as to cover from the first silicon carbide region to at least an end portion of the third silicon carbide region; and a gate electrode (8) formed on the gate insulating film. The boundary surface between the third and fourth silicon carbide regions on the surface of the third silicon carbide region is formed so as to cross the off-angle direction at an angle other than 90°.

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