| 摘要 |
A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.
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