| 摘要 |
A method for forming trench isolation on a substrate includes providing a substrate having thereon a pad layer and a hard mask; forming a first shallow trench in a first area and a second trench in a second area on the substrate; forming a resist layer covering the first area while exposing the second area; etching the second shallow trench to form a deep trench; forming oxide liner within the first shallow trench and the deep trench; and filling the shallow trench and the deep trench with an oxide layer. |
