METHOD FOR FORMING COPPER DIFFUSION BARRIER

摘要

PURPOSE: A method for manufacturing a copper non-proliferation film is provided to evaporate an iridium thin film as the thickness less than 5nm by rapidly discomposing an organic ligand surrounding an iridium precursor. CONSTITUTION: An iridium precursor which can be used as a copper non-proliferation film is evaporated on a substrate(S100). An organic ligand surrounding the iridium precursor is eliminated by injecting predetermined gas of a plasma state while evaporating the iridium precursor to the substrate(S200). The copper non-proliferation film is manufactured by executing a purge process for a constant time. The thickness of the copper non-proliferation film is less than 5nm.