SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a semiconductor substrate, a semiconductor fin located on the semiconductor substrate, and an etch stop layer located between the semiconductor substrate and the semiconductor fin, wherein a lateral sidewall of the semiconductor fin is substantially on the Si {111} crystal plane. Since the semiconductor fin exhibits better surface quality and less crystal defects, it is favorable for manufacturing FINFET.