发明名称 |
METHOD FOR FABRICATING DEEP TRENCH ISOLATION |
摘要 |
The invention provides a method for fabricating a deep trench isolation including: providing a substrate; forming a first trench in the substrate; conformally forming a first liner layer on the sidewall and bottom of the first trench; forming a first filler layer on the first liner layer and filling the first trench; forming an epitaxial layer on the substrate and the first trench; forming a second trench through the epitaxial layer and over the first trench; conformally forming a second liner layer on the sidewall and bottom of the second trench; and forming a second filler layer on the second liner layer and filling the second trench.
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申请公布号 |
US2012190169(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113181689 |
申请日期 |
2011.07.13 |
申请人 |
CHIN YU-LUNG;TU SHANG-HUI;LIN SHIN-CHENG |
发明人 |
CHIN YU-LUNG;TU SHANG-HUI;LIN SHIN-CHENG |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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