发明名称 MASK PLATE, PATTENING METHOD AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
摘要 An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.
申请公布号 US2012190197(A1) 申请公布日期 2012.07.26
申请号 US201213347865 申请日期 2012.01.11
申请人 HUI GUANBAO;CHOI SEUNGJIN;ZHANG FENG;XUE JIANSHE;BOE TECHNOLOGY GROUP CO., LTD. 发明人 HUI GUANBAO;CHOI SEUNGJIN;ZHANG FENG;XUE JIANSHE
分类号 H01L21/027;G03F1/38 主分类号 H01L21/027
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