发明名称 |
MASK PLATE, PATTENING METHOD AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE |
摘要 |
An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.
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申请公布号 |
US2012190197(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213347865 |
申请日期 |
2012.01.11 |
申请人 |
HUI GUANBAO;CHOI SEUNGJIN;ZHANG FENG;XUE JIANSHE;BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
HUI GUANBAO;CHOI SEUNGJIN;ZHANG FENG;XUE JIANSHE |
分类号 |
H01L21/027;G03F1/38 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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