发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h/λ of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h/λ of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h/λ of the dielectric layer is about 0.2 or less.
申请公布号 US2012187799(A1) 申请公布日期 2012.07.26
申请号 US201213432006 申请日期 2012.03.28
申请人 NAKAHASHI NORIHIKO;MURATA MANUFACTURING CO., LTD. 发明人 NAKAHASHI NORIHIKO
分类号 H01L41/047 主分类号 H01L41/047
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