| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems that it is hard to secure a breakdown voltage at a periphery equivalent to or greater than that in a cell part by a conventional periphery termination structure or RESURF structure because concentration at a body cell part becomes relatively high concentration in a super junction structure such as a power MOSFET; in particular, it is a problem that variation in breakdown voltage at a peripheral corner part of a chip becomes responsive to charge unbalance of the super junction structure due to electric field concentration. <P>SOLUTION: In a semiconductor power device such as a power MOSFET having super junction structures in an active cell region and a chip periphery region, an outer end of a surface RESURF region of a second conductivity type linked to a principal junction of the second conductivity type on a surface of a drift region of a first conductivity type and having a concentration lower than that of the principal junction, is arranged in an intermediate region between an outer end of the principal junction and an outer end of the super junction structure in the chip periphery region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
