发明名称 |
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a substrate having highly reliable Local SOI structure at low cost. <P>SOLUTION: A manufacturing method of a Local SOI semiconductor substrate comprises: a semiconductor layer formation step of sequentially forming, on a substrate 10 of a first semiconductor, a layer of a second semiconductor and a layer 12 of the first semiconductor by crystal growth; an opening region formation step of forming an opening region 13 by removing the layer of the second semiconductor by etching; a delayed oxidation film deposition step of depositing a delayed oxidation film 14 formed of a material including a nitride film, a carbide film or an oxide film on the opening region such that a film thickness at an inlet port of the opening region becomes a predetermined film thickness; and a thermal oxidation step of forming a thermal oxide film 15 in the opening region by thermal oxidation of a part of the first semiconductor included in the substrate of the first semiconductor and the layer of the first semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012142440(A) |
申请公布日期 |
2012.07.26 |
申请号 |
JP20100294229 |
申请日期 |
2010.12.28 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
HANEDA MASAKI;HATADA AKIYOSHI |
分类号 |
H01L21/762;H01L21/336;H01L21/76;H01L27/08;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|