| 摘要 |
A method for dissolving the buried oxide layer of a SeOI wafer in order to decrease its thickness. The SeOI wafer includes a thin working layer made from one or more semiconductor material(s); a support layer, and a buried oxide (BOX) layer between the working layer and the support layer. The dissolution rate of the buried oxide layer is controlled and set to be below 0.06Å/sec.
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