发明名称 |
METHOD FOR FABRICATING A FIELD EFFECT DEVICE WITH WEAK JUNCTION CAPACITANCE |
摘要 |
The field effect device is formed on a substrate of semiconductor on insulator type provided with a support substrate separated from a semiconductor film by an electrically insulating layer. The source and drain electrodes are formed in the semiconductor film on each side of the gate electrode. The electrically insulating layer comprises a first area having a first electric capacitance value between the semiconductor film and the support substrate facing the gate electrode. The electrically insulating layer comprises second and third areas having a higher electric capacitance value than the first value between the semiconductor film and the support substrate facing the source and drain electrodes.
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申请公布号 |
US2012190214(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213357061 |
申请日期 |
2012.01.24 |
申请人 |
VINET MAUD;GRENOUILLET LAURENT;LE TIEC YANNICK;POSSEME NICOLAS;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
VINET MAUD;GRENOUILLET LAURENT;LE TIEC YANNICK;POSSEME NICOLAS |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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