发明名称 |
TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE |
摘要 |
Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template. In the case where a light emitting device is manufactured using the template, it is possible to improve workability of the manufacturing process and to enhance luminous efficacy of the light emitting device. |
申请公布号 |
US2012187444(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113189530 |
申请日期 |
2011.07.24 |
申请人 |
OH CHUNG-SEOK;JANG SUNG-HWAN;JUNG HO-IL;PARK CHI-KWON;PARK KUN;SEMIMATERIALS CO., LTD. |
发明人 |
OH CHUNG-SEOK;JANG SUNG-HWAN;JUNG HO-IL;PARK CHI-KWON;PARK KUN |
分类号 |
H01L33/62;C30B25/02 |
主分类号 |
H01L33/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|